Our research demonstrates the vast potential of the GAA Si NWFET in the sub-3-nm gate-length region. Through strain engineering, about an 80% increase of on-state current is observed in the 5-nm- L g p-type GAA Si NWFET. Compared with the similar-sized trigate Si NW FinFET, an approximately 200% increase in the on-state current and about 15% decrease in the subthreshold swing are witnessed in GAA Si NWFET at the same 5-nm L g. The best-performing 5-nm- L g n-type GAA Si NWFET exhibits an energy-delay product comparable with typical monolayer two-dimensional FETs. Fin field effect transistor (FinFET) is the newest technology compared to metal oxide semiconductor field effect transistors (FET), and we designed various structures of FinFETs as double-gate FETs, trigate FETs, and gate all around field effect transistor in nanometer technology using Silvaco TCAD tool. The minimum gate length ( L g) at which the n- and p-type GAA Si NWFET can satisfy the high-performance application requirements ( on-state current, gate capacitance, delay time, and power dissipation) of the International Technology Roadmap for Semiconductors is 3 nm. We prove that the electrical conduction is concentrated in the core of the ultranarrow wire channel. In this paper, the performance limit of the GAA Si NWFET with a 1-nm diameter is investigated by utilizing ab initio quantum transport simulations. The application of field effect transistors (FET) as transducers in electrochemical sensors was first described in 1970 by Bergveld 1.Since then, field effect transistor (FET) based. Experimentally, the diameter of Si NWs has been scaled down to 1 nm. ![]() The gate-all-around (GAA) Si nanowire (NW) field-effect transistor (FET) is considered one of the most promising successors of the current mainstream Si fin FET (FinFET) owing to its better electrostatic gate control. Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) -Ga2O3 substrate.
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